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| Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit: mm s Features q q q 9.90.3 3.00.5 4.60.2 2.90.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 80 60 6 10 5 1 40 2.0 150 -55 to +150 Unit V V V A A A W C C 15.00.5 3.20.1 13.70.2 4.20.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.40.2 1.60.2 0.80.1 2.60.1 0.550.15 1 2 2.540.3 3 5.080.5 1:Base 2:Collector 3:Emitter TO-220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A IC = 4A, IB = 0.1A VCE = 12V, IC = 0.4A, f = 10MHz IC = 4A, IB1 = 0.08A, IB2 = - 0.08A, VCC = 50V 30 0.4 2.0 0.6 60 500 2000 0.3 V MHz s s s min typ max 100 100 Unit A A V *h FE Rank classification P Q Rank hFE 800 to 2000 500 to 1200 1 Power Transistors PC -- Ta 50 2SD2528 IC -- VCE TC=25C 7 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 Collector power dissipation PC (W) Collector current IC (A) 40 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink 8 6 5 4 3 2 1mA 1 0 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1 30 10-1 20 10 (2) (3) (4) 10-2 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 10-3 10-1 1 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 102 104 IC/IB=50 hFE -- IC 300 fT -- IC VCE=12V f=10MHz TC=25C 100 Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 103 Transition frequency fT (MHz) 10-1 1 10 1 30 102 10-1 10 10-2 10-1 1 10 10 10-2 3 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=-IB2) VCC=50V TC=25C tstg 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 5 6 7 8 tf ton Area of safe operation (ASO) 30 ICP t=1ms IC 3 1s 1 10ms Switching time ton,tstg,tf (s) 10 Collector current IC (A) 10 0.3 0.1 Non repetitive pulse TC=25C 1 3 10 30 100 Collector current IC (A) Collector to emitter voltage VCE (V) 2 |
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